STP16NK60Z
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 14A TO-220
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Buying Options
Total Price: USD $1.11
Unit Price: USD $1.10675
≥1 USD $1.10675
≥10 USD $0.9082
≥100 USD $0.8797
≥500 USD $0.8512
≥1000 USD $0.8227
Inventory: 1191
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series SuperMESH?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 38Ohm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating 14A
Base Part Number STP16N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 420m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 3.75V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 56A
Dimensions
Height 15.75mm
Length 10.4mm
Width 4.6mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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