FF150R12MS4GBOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 1200V 150A
PDF
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Buying Options
Total Price: USD $130.16
Unit Price: USD $130.1608
≥1 USD $130.1608
≥10 USD $121.9108
≥100 USD $117.32717
Inventory: 54
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead, Lead Free
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 11nF @ 25V
NTC Thermistor Yes
Turn Off Time-Nom (toff) 590 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 150A
Turn On Time 180 ns
Collector Emitter Saturation Voltage 3.7V
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 5mA
Max Collector Current 225A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power - Max 1250W
Case Connection ISOLATED
Power Dissipation 1.25kW
Element Configuration Dual
Configuration 2 Independent
Number of Elements 2
Qualification Status Not Qualified
Pin Count 11
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 11
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Pbfree Code no
Published 2002
Operating Temperature -40°C~125°C
Physical
Transistor Element Material SILICON
Number of Pins 11
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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