Avalanche Energy Rating (Eas) 35.6 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 87A
Drain-source On Resistance-Max 0.015Ohm
Drain Current-Max (Abs) (ID) 6.9A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 6.9A Ta 35A Tc
Input Capacitance (Ciss) (Max) @ Vds 845pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 15m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.26W Ta 32.6W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ