FD1000R33HE3KBPSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 3.3KV 1000A 9-pin IHVB190-3
PDF
/
Inventory: 5362
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 190nF @ 25V
NTC Thermistor No
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 3550 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 1000A
Turn On Time 1150 ns
Current - Collector (Ic) (Max) 1000A
Voltage - Collector Emitter Breakdown (Max) 3300V
Current - Collector Cutoff (Max) 5mA
Max Collector Current 1kA
Collector Emitter Voltage (VCEO) 3.3kV
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power - Max 11500W
Case Connection ISOLATED
Element Configuration Dual
Configuration Dual Brake Chopper
Number of Elements 2
Terminal Form UNSPECIFIED
Terminal Position UPPER
Number of Terminations 9
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Published 2002
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Number of Pins 9
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
Recommended For You
FD1000R33HE3KBPSA1+price,FD1000R33HE3KBPSA1+datasheet,FD1000R33HE3KBPSA1+in stock,buy+FD1000R33HE3KBPSA1,finder+FD1000R33HE3KBPSA1,FD1000R33HE3KBPSA1+tutorials,FD1000R33HE3KBPSA1+download