IRF6716MTR1PBF
RoHS
/
Package DirectFET? Isometric MX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 39A DIRECTFET
PDF
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Buying Options
Total Price: USD $19.25
Unit Price: USD $19.24795
≥1 USD $19.24795
≥10 USD $15.7928
≥100 USD $15.29975
≥500 USD $14.80575
≥1000 USD $14.3127
Inventory: 1093
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 5
Supplier Device Package DIRECTFET? MX
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 1.6MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 3.6W Ta 78W Tc
Power Dissipation 3.6W
Turn On Delay Time 26 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 5150pF @ 13V
Current - Continuous Drain (Id) @ 25°C 39A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 59nC @ 4.5V
Rise Time 105ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 39A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
Input Capacitance 5.15nF
Recovery Time 36 ns
Drain to Source Resistance 2.6mOhm
Rds On Max 1.6 mΩ
Nominal Vgs 1.9 V
Dimensions
Height 508μm
Length 5.45mm
Width 5.05mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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