BSM100GAL120DLCKHOSA1
RoHS 
RoHS compliant
RoHS compliantPackage Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 205A 835W
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Buying Options
Total Price: USD $266.04
Unit Price: USD $266.044743
≥1 USD $266.044743
≥200 USD $106.153217
≥500 USD $102.607074
≥1000 USD $100.854352
Inventory: 1149
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 6.5nF @ 25V
NTC Thermistor No
Turn Off Time-Nom (toff) 480 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 100A
Turn On Time 110 ns
Current - Collector (Ic) (Max) 205A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 5mA
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 835W
Case Connection ISOLATED
Configuration Single Chopper
Number of Elements 1
JESD-30 Code R-XUFM-X5
Pin Count 5
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code no
Operating Temperature -40°C~125°C
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Alternative Model
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