C2M0045170P
RoHS
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Package TO-247-4
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
ZFET SIC DMOSFET, 1700V VDS, RDS
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Technical Details
Technical
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On,Min Rds On) 20V
Drain to Source Voltage (Vdss) 1700V
Gate Charge (Qg) (Max) @ Vgs 188nC @ 20V
Current - Continuous Drain (Id) @ 25°C 72A Tc
Input Capacitance (Ciss) (Max) @ Vds 3672pF @ 1000V
Vgs(th) (Max) @ Id 4V @ 18mA
Rds On (Max) @ Id, Vgs 59mOhm @ 50A, 20V
FET Type N-Channel
Power Dissipation-Max 520W Tc
Technology SiCFET (Silicon Carbide)
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Series C2M?
Packaging Tube
Operating Temperature -40°C~150°C TJ
Physical
Supplier Device Package TO-247-4
Package / Case TO-247-4
Mounting Type Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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