SIHB22N60E-E3
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
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Buying Options
Total Price: USD $6.17
Unit Price: USD $6.175
≥1 USD $6.175
≥10 USD $5.0673
≥100 USD $4.90865
≥500 USD $4.75
≥1000 USD $4.5923
Inventory: 23003
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 19 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 227W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 68ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 54 ns
Turn-Off Delay Time 66 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 56A
DS Breakdown Voltage-Min 600V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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