SIE822DF-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage 10-PolarPAK? (S)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 20V 50A 104W 3.4mohm @ 10V
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Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK? (S)
Number of Pins 10
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 5.5MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 10
JESD-30 Code R-XDSO-N4
Number of Elements 1
Power Dissipation-Max 5.2W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.2W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4m Ω @ 18.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 10V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 2.3V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 45 mJ
Dimensions
Height 800μm
Length 6.15mm
Width 5.16mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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