Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 27.1 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Input Capacitance (Ciss) (Max) @ Vds 1015pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 46m Ω @ 10A, 10V
Element Configuration Single
Power Dissipation-Max 1.88W Ta 60W Tj
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ