SI8465DB-T2-E1
RoHS 
RoHS compliant
RoHS compliantPackage 4-XFBGA, CSPBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 20V 3.8A 1.8W 104mohm @ 4.5V
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Buying Options
Total Price: USD $0.4
Unit Price: USD $0.4048
≥1 USD $0.4048
≥10 USD $0.34232
Inventory: 120
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 46 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA, CSPBGA
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Power Dissipation-Max 780mW Ta 1.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) -3.8A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2.5A
DS Breakdown Voltage-Min 20V
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Alternative Model
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