NTD25P03LT4
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
P-CHANNEL POWER MOSFET
PDF
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Buying Options
Total Price: USD $0.89
Unit Price: USD $0.88635
≥1 USD $0.88635
≥10 USD $0.7277
≥100 USD $0.7049
≥500 USD $0.6821
≥1000 USD $0.6593
Inventory: 187401
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN LEAD
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 75W Tj
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.26pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±15V
Drain Current-Max (Abs) (ID) 25A
Drain-source On Resistance-Max 0.08Ohm
Pulsed Drain Current-Max (IDM) 75A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 200 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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