SI7820DN-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? 1212-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 1.7A 1212-8
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Buying Options
Total Price: USD $1.31
Unit Price: USD $1.3112
≥1 USD $1.3112
≥10 USD $1.08856
≥100 USD $0.866624
≥500 USD $0.733251
≥1000 USD $0.62216
Inventory: 1112
Minimum: 1
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Technical Details
Technical
Packaging Tape & Reel (TR)
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 240mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Operating Temperature -55°C~150°C TJ
Rise Time 12 ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 2.6A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 0.6 mJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case PowerPAK? 1212-8
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 14 Weeks
Dimensions
Height 1.04mm
Length 3.05mm
Width 3.05mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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