NTLJS4159NT1G
RoHS 
RoHS compliant
RoHS compliantPackage 6-WDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 28A
Drain-source On Resistance-Max 0.045Ohm
Drain Current-Max (Abs) (ID) 3.6A
Vgs (Max) ±8V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 1.045pF @ 15V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 35m Ω @ 2A, 4.5V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 700mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code S-XDSO-C6
Pin Count 6
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Terminal Form C BEND
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish MATTE TIN
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 6-WDFN Exposed Pad
Mounting Type Surface Mount
Alternative Model
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