SI7186DP-T1-GE3
RoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 80V 32A PPAK SO-8
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Buying Options
Total Price: USD $27.65
Unit Price: USD $27.64975
≥1 USD $27.64975
≥10 USD $22.68695
≥100 USD $21.97825
≥500 USD $21.2686
≥1000 USD $20.5599
Inventory: 1132
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Power Dissipation-Max 5.2W Ta 64W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.2W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2840pF @ 40V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 45 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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