STP15NM60ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 14A TO-220
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Buying Options
Total Price: USD $3.09
Unit Price: USD $3.0875
≥1 USD $3.0875
≥10 USD $2.53365
≥100 USD $2.45385
≥500 USD $2.375
≥1000 USD $2.29615
Inventory: 50195
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.6mm
Length 10.4mm
Height 15.75mm
Technical
Pulsed Drain Current-Max (IDM) 56A
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 47 ns
Fall Time (Typ) 28 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 20 ns
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 50V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 299m Ω @ 7A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 17 ns
Power Dissipation 125W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 125W Tc
Number of Elements 1
Pin Count 3
Base Part Number STP15N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Resistance 299mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series FDmesh? II
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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