Pulsed Drain Current-Max (IDM) 60A
Drain Current-Max (Abs) (ID) 35A
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 25A
Turn-Off Delay Time 53 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 8V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 6V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 3.8m Ω @ 15A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.8W Ta 52W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -50°C~150°C TJ