DS Breakdown Voltage-Min 50V
Pulsed Drain Current-Max (IDM) 420A
Drain-source On Resistance-Max 0.009Ohm
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 140A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 50V
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Current - Continuous Drain (Id) @ 25°C 140A Tc
Input Capacitance (Ciss) (Max) @ Vds 13500pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 9m Ω @ 70A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 298W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ