IRF9530
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 100V 12A TO-220AB
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Buying Options
Total Price: USD $1.19
Unit Price: USD $1.188
≥1 USD $1.188
Inventory: 1085
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Radiation Hardening No
Dimensions
Width 4.7mm
Length 10.41mm
Height 9.01mm
Technical
Rds On Max 300 mΩ
Drain to Source Resistance 300mOhm
Input Capacitance 860pF
Drain to Source Breakdown Voltage -100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 31 ns
Fall Time (Typ) 39 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Rise Time 52ns
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 300mOhm @ 7.2A, 10V
FET Type P-Channel
Turn On Delay Time 12 ns
Power Dissipation 88W
Element Configuration Single
Power Dissipation-Max 88W Tc
Number of Channels 1
Number of Elements 1
Current Rating -12A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC -100V
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2011
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Weight 6.000006g
Supplier Device Package TO-220AB
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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