IRF634SPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 250V 8.1A D2PAK
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Buying Options
Total Price: USD $10.93
Unit Price: USD $10.92975
≥1 USD $10.92975
≥10 USD $8.968
≥100 USD $8.68775
≥500 USD $8.4075
≥1000 USD $8.12725
Inventory: 1244
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 74W Tc
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 9.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 450mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.1A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 21ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 8.1A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Input Capacitance 770pF
Drain to Source Resistance 450mOhm
Rds On Max 450 mΩ
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.02mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
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