Turn Off Time-Nom (toff) 600 ns
Collector Emitter Saturation Voltage 2.15V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 280A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power Dissipation-Max 1kW
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Number of Terminations 20
Moisture Sensitivity Level (MSL) 1