3N163-E3
RoHS 
RoHS compliant
RoHS compliantPackage TO-206AF, TO-72-4 Metal Can
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
VISHAY 3N163-E3. P CHANNEL MOSFET, -40V, 50mA, TO-206AF
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Technical Details
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AF, TO-72-4 Metal Can
Number of Pins 4
Supplier Device Package TO-72
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 250Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 375mW Ta
Element Configuration Single
Power Dissipation 375mW
Turn On Delay Time 5 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 250Ohm @ 100μA, 20V
Vgs(th) (Max) @ Id 5V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50mA Ta
Rise Time 13ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) ±30V
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) -50mA
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -40V
Input Capacitance 3.5pF
Drain to Source Resistance 250Ohm
Rds On Max 250 Ω
Nominal Vgs -2.5 V
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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