Drain to Source Breakdown Voltage -12V
Gate to Source Voltage (Vgs) -8V
Continuous Drain Current (ID) 2.3A
Turn-Off Delay Time 18 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 1.14nC @ 6V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Input Capacitance (Ciss) (Max) @ Vds 236pF @ 6V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 175m Ω @ 500mA, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 4.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 500mW Ta
Base Part Number CSD23381
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature ULTRA LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ