CSD13303W1015
RoHS 
RoHS compliant
RoHS compliantPackage 6-UFBGA, DSBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH NexFET Pwr MOSFET
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Buying Options
Total Price: USD $0.47
Unit Price: USD $0.4664
≥1 USD $0.4664
≥10 USD $0.39864
≥100 USD $0.277288
≥500 USD $0.216515
≥1000 USD $0.175982
Inventory: 84
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA, DSBGA
Number of Pins 6
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Base Part Number CSD13303
Power Dissipation-Max 1.65W Ta
Element Configuration Single
Operating Mode 0.85
Turn On Delay Time 4.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 20m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 715pF @ 6V
Current - Continuous Drain (Id) @ 25°C 31A Ta
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 3.2 ns
Turn-Off Delay Time 14.7 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
Pulsed Drain Current-Max (IDM) 31A
Dimensions
Height 1mm
Length 1.5mm
Width 1.8mm
Thickness 2mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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