Pulsed Drain Current-Max (IDM) 31A
Drain to Source Breakdown Voltage 12V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 3.5A
Turn-Off Delay Time 14.7 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 31A Ta
Input Capacitance (Ciss) (Max) @ Vds 715pF @ 6V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 20m Ω @ 1.5A, 4.5V
Turn On Delay Time 4.6 ns
Element Configuration Single
Power Dissipation-Max 1.65W Ta
Base Part Number CSD13303
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ