FET Feature Schottky Diode (Isolated)
Drain Current-Max (Abs) (ID) 4.7A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.7A Ta
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 62m Ω @ 4.9A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ