STW68N60M6-4
RoHS
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Package TO-247-4
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL 600 V, 35 MOHM TYP., 6
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Technical Details
Technical
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Current - Continuous Drain (Id) @ 25°C 63A Tc
Input Capacitance (Ciss) (Max) @ Vds 4360pF @ 100V
Vgs(th) (Max) @ Id 4.75V @ 250μA
Rds On (Max) @ Id, Vgs 41m Ω @ 31.5A, 10V
FET Type N-Channel
Power Dissipation-Max 390W Tc
Reach Compliance Code compliant
Technology MOSFET (Metal Oxide)
Part Status Active
Series MDmesh? M6
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-247-4
Mounting Type Through Hole
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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