TN0110N3-G-P002
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH Enhancmnt Mode MOSFET
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Buying Options
Total Price: USD $1.2
Unit Price: USD $1.1968
≥1 USD $1.1968
≥10 USD $0.9944
≥100 USD $0.9064
Inventory: 1122
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 453.59237mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code O-PBCY-T3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Current - Continuous Drain (Id) @ 25°C 350mA Tj
Rise Time 3ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 350mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.35A
Drain-source On Resistance-Max 3Ohm
Feedback Cap-Max (Crss) 8 pF
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
Compliance
RoHS Status ROHS3 Compliant
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