STW62NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch 600V 0.049 Ohm 55A MDmesh II FET
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Buying Options
Total Price: USD $13.22
Unit Price: USD $13.2176
≥1 USD $13.2176
≥10 USD $10.30304
Inventory: 118
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW62N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 450W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350W
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 49m Ω @ 32.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 100V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Gate Charge (Qg) (Max) @ Vgs 174nC @ 10V
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 210 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 65A
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 55A
Drain-source On Resistance-Max 0.048Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 220A
Dimensions
Height 20.15mm
Length 15.75mm
Width 5.15mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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