STW55NM50N
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-channel 500V, 54 A Power II Mdmesh
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 850 mJ
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-247AC
Continuous Drain Current (ID) 54A
Turn-Off Delay Time 250 ns
Fall Time (Typ) 70 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 40ns
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Current - Continuous Drain (Id) @ 25°C 54A Tc
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 54m Ω @ 27A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 350W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 350W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STW55N
Reach Compliance Code unknown
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 54mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series MDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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