IPD65R950CFDATMA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 650(Min)V 3.9A 3-Pin TO-252 T/R
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Buying Options
Total Price: USD $3.14
Unit Price: USD $3.142667
≥1 USD $3.142667
≥10 USD $2.964781
≥100 USD $2.79696
≥500 USD $2.638642
≥1000 USD $2.489284
Inventory: 1221
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series CoolMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 36.7W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3.9A Tc
Gate Charge (Qg) (Max) @ Vgs 14.1nC @ 10V
Rise Time 6.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13.8 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 3.9A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.95Ohm
Drain to Source Breakdown Voltage 700V
Pulsed Drain Current-Max (IDM) 11A
Avalanche Energy Rating (Eas) 50 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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