STW47NM60ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch 600V 0.075 Ohm 35A FDmesh II
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Buying Options
Total Price: USD $9.68
Unit Price: USD $9.67765
≥1 USD $9.67765
≥10 USD $7.94105
≥100 USD $7.69215
≥500 USD $7.4442
≥1000 USD $7.19625
Inventory: 1288
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 35A
Turn-Off Delay Time 120 ns
Fall Time (Typ) 50 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 40ns
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 50V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 88m Ω @ 17.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 30 ns
Power Dissipation 255W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 255W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STW47N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
Resistance 88MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series Automotive, AEC-Q101, FDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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