FD200R12KE3
RoHS
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Package /
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
VCEsat-Max 2.15 V
Gate-Emitter Voltage-Max 20V
Collector-Emitter Voltage-Max 1200V
Turn Off Time-Nom (toff) 830 ns
Collector Current-Max (IC) 295A
Turn On Time 400 ns
Power Dissipation-Max (Abs) 1040W
Polarity/Channel Type N-CHANNEL
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X5
Pin Count 5
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Pbfree Code icon-pbfree yes
Physical
Transistor Element Material SILICON
Number of Terminals 5
Surface Mount NO
Alternative Model
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