Drain to Source Breakdown Voltage 850V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 19A
Turn-Off Delay Time 55 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 100V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 275m Ω @ 9.5A, 10V
Element Configuration Single
Power Dissipation-Max 250W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ