SPD02N50C3
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
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Buying Options
Total Price: USD $2.77
Unit Price: USD $2.77115
≥1 USD $2.77115
≥10 USD $2.2743
≥100 USD $2.20305
≥500 USD $2.1318
≥1000 USD $2.06055
Inventory: 15502
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 25W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Drain to Source Voltage (Vdss) 560V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 1.8A
Drain-source On Resistance-Max 3Ohm
Pulsed Drain Current-Max (IDM) 5.4A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 50 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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