STW19NM50N
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET POWER MOSFET N-CH 500V 13A
PDF
/
Buying Options
Total Price: USD $5.87
Unit Price: USD $5.8696
≥1 USD $5.8696
≥10 USD $4.64787
≥100 USD $3.98391
≥500 USD $3.541261
≥1000 USD $3.032207
≥3000 USD $2.855142
Inventory: 412
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5.15mm
Length 15.75mm
Height 20.15mm
Technical
Avalanche Energy Rating (Eas) 208 mJ
Pulsed Drain Current-Max (IDM) 56A
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 25V
Threshold Voltage 3V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 61 ns
Fall Time (Typ) 17 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 16 ns
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 250m Ω @ 7A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 12 ns
Power Dissipation 110W
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Power Dissipation-Max 110W Tc
Number of Elements 1
Pin Count 3
Base Part Number STW19N
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 250mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series MDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Lifecycle Status NRND (Last Updated: 8 months ago)
Alternative Model
Recommended For You
STW19NM50N+price,STW19NM50N+datasheet,STW19NM50N+in stock,buy+STW19NM50N,finder+STW19NM50N,STW19NM50N+tutorials,STW19NM50N+download