IRFH8325TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 82A 5X6 PQFN
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Buying Options
Total Price: USD $0.54
Unit Price: USD $0.5368
≥1 USD $0.5368
≥10 USD $0.46464
≥100 USD $0.321552
≥500 USD $0.268682
≥1000 USD $0.228668
≥3000 USD $0.203658
Inventory: 1095
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 54W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2487pF @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Ta 82A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.1 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.005Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 94 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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