Drain to Source Breakdown Voltage 950V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 62 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 100V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 500m Ω @ 6A, 10V
Element Configuration Single
Power Dissipation-Max 170W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ