STV160NF02LAT4
RoHS 
RoHS compliant
RoHS compliantPackage PowerSO-10 Exposed Bottom Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 160A POWERSO-10
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 330 mJ
Pulsed Drain Current-Max (IDM) 640A
Drain to Source Breakdown Voltage 20V
Drain-source On Resistance-Max 0.0037Ohm
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 160A
Turn-Off Delay Time 105 ns
Fall Time (Typ) 200 ns
Vgs (Max) ±15V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Rise Time 650ns
Gate Charge (Qg) (Max) @ Vgs 175nC @ 10V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 15V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 2.7m Ω @ 80A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 210W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 210W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G10
Pin Count 10
Base Part Number STV160
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 10
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Series STripFET?
Packaging Tape & Reel (TR)
Operating Temperature 175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 12
Package / Case PowerSO-10 Exposed Bottom Pad
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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