IRFP260
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 46A TO247
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Buying Options
Total Price: USD $1.06
Unit Price: USD $1.06115
≥1 USD $1.06115
≥10 USD $0.8702
≥100 USD $0.8436
≥500 USD $0.81605
≥1000 USD $0.78945
Inventory: 187417
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Pulsed Drain Current-Max (IDM) 184A
Drain to Source Breakdown Voltage 200V
Drain-source On Resistance-Max 0.055Ohm
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-247AD
Continuous Drain Current (ID) 46A
Turn-Off Delay Time 90 ns
Fall Time (Typ) 28 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 30ns
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 55m Ω @ 28A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 280W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 280W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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