Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 110W Tc
Element Configuration Single
Rds On (Max) @ Id, Vgs 1.3 Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 50V
Current - Continuous Drain (Id) @ 25°C 5.4A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 5.4A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 650V