STU2N80K5
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 2A IPAK
PDF
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Buying Options
Total Price: USD $1.14
Unit Price: USD $1.1352
≥1 USD $1.1352
≥10 USD $0.915086
≥100 USD $0.72512
≥500 USD $0.614627
≥1000 USD $0.500685
≥3000 USD $0.471328
Inventory: 1095
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH5?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STU2N
Number of Elements 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 105pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 2A
Pulsed Drain Current-Max (IDM) 8A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 60.5 mJ
Dimensions
Height 6.2mm
Length 6.6mm
Width 2.4mm
Compliance
RoHS Status ROHS3 Compliant
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