IXTH12N100L
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 12A TO-247
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Width 5.3mm
Length 16.26mm
Height 21.46mm
Technical
Avalanche Energy Rating (Eas) 1500 mJ
Pulsed Drain Current-Max (IDM) 25A
Drain to Source Breakdown Voltage 1kV
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-247AD
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 110 ns
Fall Time (Typ) 65 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 20V
Drain to Source Voltage (Vdss) 1000V
Rise Time 55 ns
Gate Charge (Qg) (Max) @ Vgs 155nC @ 20V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 1.3 Ω @ 500mA, 20V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 30 ns
Case Connection DRAIN
Power Dissipation 400W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 400W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 2007
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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