STU10NM65N
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Channel 650V Power MDmesh
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Drain to Source Breakdown Voltage 650V
Drain-source On Resistance-Max 0.48Ohm
Drain Current-Max (Abs) (ID) 9A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 9A
Turn-Off Delay Time 50 ns
Fall Time (Typ) 20 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 8ns
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 480m Ω @ 4.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 90W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 90W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number STU10N
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series MDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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