Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.007Ohm
Gate to Source Voltage (Vgs) 18V
Continuous Drain Current (ID) 17A
Turn-Off Delay Time 47.5 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Input Capacitance (Ciss) (Max) @ Vds 2160pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 5.5m Ω @ 8.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.2W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ