Avalanche Energy Rating (Eas) 797 mJ
DS Breakdown Voltage-Min 800V
Pulsed Drain Current-Max (IDM) 70A
Drain-source On Resistance-Max 0.58Ohm
Continuous Drain Current (ID) 18A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 800V
Gate Charge (Qg) (Max) @ Vgs 122nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Input Capacitance (Ciss) (Max) @ Vds 3757pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 580m Ω @ 9A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 500W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Terminal Finish PURE MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ