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RoHS
RoHS RoHS compliant
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V 18A D3PAK
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Avalanche Energy Rating (Eas) 797 mJ
DS Breakdown Voltage-Min 800V
Pulsed Drain Current-Max (IDM) 70A
Drain-source On Resistance-Max 0.58Ohm
Continuous Drain Current (ID) 18A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 800V
Gate Charge (Qg) (Max) @ Vgs 122nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Input Capacitance (Ciss) (Max) @ Vds 3757pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 580m Ω @ 9A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 500W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Terminal Finish PURE MATTE TIN
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series POWER MOS 8?
Published 1997
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 5 Weeks

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