Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 400mA
Turn-Off Delay Time 23 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 400mA Tc
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 50V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 8 Ω @ 600mA, 10V
Element Configuration Single
Power Dissipation-Max 3W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ