Pulsed Drain Current-Max (IDM) 20A
Drain Current-Max (Abs) (ID) 3.2A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 13A
Turn-Off Delay Time 22 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 150V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta 13A Tc
Input Capacitance (Ciss) (Max) @ Vds 2045pF @ 75V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 107m Ω @ 3A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.3W Ta 62W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ