STP8N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220 Tube
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Buying Options
Total Price: USD $1.65
Unit Price: USD $1.6454
≥1 USD $1.6454
≥10 USD $1.34995
≥100 USD $1.30815
≥500 USD $1.2654
≥1000 USD $1.2236
Inventory: 1377
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.6mm
Length 10.4mm
Height 15.75mm
Technical
Pulsed Drain Current-Max (IDM) 28A
Drain to Source Breakdown Voltage 650V
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 7A
Turn-Off Delay Time 20 ns
Fall Time (Typ) 11 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 14 ns
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 600m Ω @ 3.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 50 ns
Power Dissipation 70W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 70W Tc
Number of Elements 1
Pin Count 3
Base Part Number STP8N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
Resistance 600mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Series MDmesh? V
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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