SCT30N120H
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
PTD WBG & POWER RF
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Inventory: 7837
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Technical Details
Technical
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On,Min Rds On) 20V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 105nC @ 20V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 400V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Rds On (Max) @ Id, Vgs 100m Ω @ 20A, 20V
FET Type N-Channel
Power Dissipation-Max 270W Tc
Technology SiCFET (Silicon Carbide)
Part Status Active
Packaging Tape & Reel (TR)
Operating Temperature -55°C~200°C TJ
Physical
Package / Case TO-247-3
Mounting Type Through Hole
Alternative Model
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