STP85NF55L
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 80A TO-220
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Buying Options
Total Price: USD $4.03
Unit Price: USD $4.028
≥1 USD $4.028
≥10 USD $3.30505
≥100 USD $3.2015
≥500 USD $3.09795
≥1000 USD $2.99535
Inventory: 51285
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 38 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET? II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Resistance 8mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP85N
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4050pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 5V
Rise Time 165 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 980 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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